| PART |
Description |
Maker |
| MB85343C-70 |
CMOS 1M×32 BIT
Hyper Page Mode DRAM Module(CMOS 1M×32位超级页面存取模式动态RAM模块)
CMOS 1M×32 BIT Hyper Page Mode DRAM Module(CMOS 1M×32位超级页面存取模式动态RAM模块) 的CMOS 100万32位的超页模式内存的CMOS00万32位超级页面存取模式动态内存模块）
|
Fujitsu Limited
Fujitsu, Ltd.
|
| MB8504D064AA-70 MB8504D064AA-60 |
CMOS 4M×64 BIT
Hyper Page Mode DRAM Module(CMOS 4M×64 位超级页面存取模式动态RAM模块)
|
Fujitsu Limited
|
| MB8116400A-70 MB8116400A-50 MB8116400A-60 |
CMOS 4 M ×4 BIT
Fast Page Mode DRAM(CMOS 4 M ×4 位快速页面存取模式动态RAM)
CMOS 4 M ?4 BIT Fast Page Mode DRAM(CMOS 4 M ?4 浣?揩??〉?㈠???ā寮????AM)
|
Fujitsu Limited
|
| MB81V4100C-60 MB81V4100C-70 |
CMOS 4 M ×1 BIT
Fast Page Mode DRAM(CMOS 4 M ×1 位快速页面存取模式动态RAM)
|
Fujitsu Limited
|
| MB814400D-60 |
CMOS 4 M ×1 BIT
Fast Page Mode DRAM(CMOS 4 M ×1位速页面存取模式动态RAM)
|
Fujitsu Limited
|
| HY5DU56422DTP HY5DU56822DTP HY5DU56822DTP-J HY5DU5 |
256M DDR SDRAM (268,435,456-bit CMOS Double Data Rate(DDR) Synchronous DRAM) 32M X 8 DDR DRAM, 0.75 ns, PDSO66
|
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| K4S561632C-TC75 K4S561632C K4S561632C-L1H K4S56163 |
16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
IC,SDRAM,4X4MX16,CMOS,TSOP,54PIN,PLASTIC
256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM
|
Samsung semiconductor
|
| VG2618165C VG26V18165C |
CMOS DRAM
|
Vanguard Microelectronics Limited
|
| KM41C256 |
CMOS DRAM
|
Samsung Electronics
|
| VG2618160CJ |
CMOS DRAM
|
Vanguard Microelectronics Limited
|
